| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 1500 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | NPN epitaxial planer Silicon transistor General-Purpose Amp Applications Very Small-sized package peimitting the 2SC4413-applied sets to be made samll and slim Adoption of FBET process high DC corrent gain Low collector to emitter saturation voltage |
| 描述与应用 | NPN外延刨床硅的晶体管 通用放大器应用 非常小的封装允许2SC4413的应用设置制得微小和轻薄 采纳FBET过程 直流电流量增益高 集电极到发射极饱和电压低 |