| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 40V |
| 集电极连续输出电流ICCollector Current(IC) | 200mA/0.2A |
| 截止频率fTTranstion Frequency(fT) | 300MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 300mV/0.3V |
| 耗散功率PcPower Dissipation | 350mW/0.35W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor General purpose applications Switching applications Features Low leakage current Excellent DC current gain linearity. Low saturation voltage Low collector output capacitance. Complementary to 2N3906S |
| 描述与应用 | NPN平面外延硅晶体管 一般用途 开关应用 特点 低漏电流 优秀DC电流增益线性度。 低饱和电压 低集电极输出电容。 互补型2N3906S |