| 最大源漏极电压VdsDrain-Source Voltage | 20V/-20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V/12V |
| 最大漏极电流IdDrain Current | 5.9A/-4.2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 39mΩ@ VGS = 4.5V, ID = 5.9A/73mΩ@ VGS = 4.5V, ID = 4.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.5V/-0.6~-1.5V |
| 耗散功率PdPower Dissipation | 1.6W |
| Description & Applications | Complementary Power Trench MOSFET General Description These N & P-Channel MOSFETs are produced using Fairchild Semiconductor’s advanced Power Trench process that has been especially tailored to minimize on-state resistance and yet maintain superior switching performance. These devices are well suited for low voltage and battery powered applications where low in-line power loss and fast switching are required. Applications • DC/DC converter • Load switch • Motor Driving Features • Low gate charge • High performance trench technology for extremely low RDS(ON) • FLMP SSOT-6 package |
| 描述与应用 | 互补功率沟槽MOSFET 概述 这些N＆P沟道MOSFET的生产采用飞兆半导体先进的功率沟槽进程，已特别是针对减少通态电阻，同时保持出色的开关性能。 这些器件非常适合于低电压和电池供电应用的低线的功率损耗和快速开关是必需的。 应用 •DC/ DC转换器 •负荷开关 •电机驱动 特点 •低栅极电荷 •高性能沟道技术极低的RDS（ON） •FLMP SSOT-6封装 |