| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.095~0.48ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -2~-5v |
| 耗散功率PdPower Dissipation | 200mW/0.2W |
| Description & Applications | •Silicon N-Channel Junction FET •For impedance conversion in low frequency For electret capacitor microphone Features • High mutual conductance gm • Low noise voltage of NV |
| 描述与应用 | •硅N沟道结型场效应管 •对于低频阻抗转换中 对于驻极体电容式麦克风 特点 •高互导GM •低噪声电压的NV |