集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 180V |
集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 160V |
集电极连续输出电流ICCollector Current(IC) | 1.5A |
截止频率fTTranstion Frequency(fT) | 120MHz |
直流电流增益hFEDC Current Gain(hFE) | 140~280 |
管压降VCE(sat)Collector-Emitter Saturation Voltage | 450mV/0.45V |
耗散功率PcPower Dissipation | 500mW/0.5W |
Description & Applications | NPN epitaxial planar Silicon Transistors High-Voltage Switching applications High breakdown voltage and large current capacity Very small size making it easy to provide high-density. Complementary to 2SA1419 |
描述与应用 | NPN外延平面硅晶体管 高电压开关应用 高击穿电压和大电流的能力 非常小的尺寸使其易于提供高密度。 互补型2SA1455K |