| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 30V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | |
| 直流电流增益hFEDC Current Gain(hFE) | 25~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 100mW/0.1W |
| Description & Applications | Silicon NPN epitaxial planar type High-frequency amplification, oscillation and mixing for ■ Features • High transition frequency fT • Tepi downsizing of the equipment and for the SSS-Mini type package Automatic insertion through the operating |
| 描述与应用 | NPN硅外延平面型 高频放大，振荡和混合 ■特点 •高转换频率fT •特别小型的设备和SSS迷你型封装 通过操作系统的自动插入 |