| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 7.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 500mW/0.5W |
| Description & Applications | NPN Silicon Planar RF Transistor Features • Low noise figure • High transition frequency fT = 7.5 GHz • Excellent large signal behaviour • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications For low noise, low distortion broadband amplifiers in telecommunications and antenna systems and power amplifiers for DECT and PCN systems at collector currents between 20 mA and 80 mA up to 2 GHz |
| 描述与应用 | NPN硅平面RF晶体管 特点 •低噪声系数 •高转换频率fT=7.5 GHz •出色的大信号行为 •铅（Pb）免费组件 •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 低噪声，低失真宽带放大器在电信和天线系统的DECT和PCN系统和功率放大器集电极电流20毫安和80毫安之间高达2 GHz |