| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 50mA |
| 截止频率fTTranstion Frequency(fT) | 6Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 40~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 200mW/0.2W |
| Description & Applications | NPN Silicon Planar RF Transistor Features • High power gain • Low noise figure • High transition frequency • Lead (Pb)-free component • Component in accordance to RoHS 2002/95/EC and WEEE 2002/96/EC Applications RF amplifier up to GHz range. |
| 描述与应用 | NPN硅平面RF晶体管 特点 •高功率增益 •低噪声系数 •高转换频率 •铅（Pb）免费组件 •组件按照RoHS 2002/95/EC和WEEE2002/96/EC 应用 RF放大器高达GHz范围内。 |