| Q1 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
50V |
| Q1集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V |
| Q1集电极连续输出电流IC Collector Current(IC) |
100MA/0.1A |
| Q2 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-50V |
| Q2集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-50V |
| Q2集电极连续输出电流IC Collector Current(IC) |
-100MA/-0.1A |
| Q1基极输入电阻R1 Input Resistance(R1) |
22KΩ |
| Q1基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ |
| Q1电阻比(R1/R2) Q1 Resistance Ratio |
1 |
| Q2基极输入电阻R1 Input Resistance(R1) |
22KΩ |
| Q2基极-发射极输入电阻R2 Base-Emitter Resistance(R2) |
22KΩ |
| Q2电阻比(R1/R2) Q2 Resistance Ratio |
1 |
| 直流电流增益hFE DC Current Gain(hFE) Q1/Q2 |
60/60 |
| 截止频率fT Transtion Frequency(fT) Q1/Q2 |
150MHZ/80MHZ |
| 耗散功率Pc Power Dissipation |
125MW/0.125W |
| Description & Applications |
Silicon NPN epitaxial planar type (Tr1)
Silicon PNP epitaxial planar type (Tr2)
For switching/digital circuits
■ Features
• Two elements incorporated into one package
(Transistors with built-in resistor)
• Reduction of the mounting area and assembly cost by one half
■ Basic Part Number
• UNR2212 + UNR2112
|
| 描述与应用 |
NPN型硅外延平面类型(Tr1)
PNP型硅外延平面类型(Tr2)
开关/数字电路
■特性
两个元素纳入一个包(晶体管内置电阻)
减少一半的安装面积和组装成本
■基本零件号
UNR2212 + UNR2112
|