| 最大源漏极电压VdsDrain-Source Voltage | 30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 1.25A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 11.5mΩ@ VGS = 4.5V,ID = 10A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1V |
| 耗散功率PdPower Dissipation | 2.5W |
| Description & Applications | N-Channel Power MOSFET Feature Low Rds(ON) Applications • DC-DC converters for mobile CPUS • Battery-powered portable equipment • High power density switch-mode supplies • point-of-use power supplies |
| 描述与应用 | N沟道功率MOSFET 特点 低RDS（ON） 应用 •移动CPU的DC-DC转换器 •电池供电的便携式设备 •高功率密度开关模式电源 •使用点电源 |