| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 180V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 160V |
| 集电极连续输出电流ICCollector Current(IC) | 600mA/0.6A |
| 截止频率fTTranstion Frequency(fT) | 100~400MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 80~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 625mW/0.625W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor Descriptions • General purpose amplifier • High voltage application Features • High collector breakdown voltage • Low collector saturation voltage • Complementary to 2N5401 |
| 描述与应用 | NPN平面外延硅晶体管 简述 •通用放大器 •高电压施加 特点 •高集电极击穿电压 •低集电极饱和电压 •互补型2N5401 |