| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
60V/-60V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
50V/-50V |
| 集电极连续输出电流IC Collector Current(IC) |
100mA/-100mA |
| 截止频率fT Transtion Frequency(fT) |
150MHz/80MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
180~390/180~390 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
100mV/-300mV |
| 耗散功率Pc Power Dissipation |
125mW |
| Description & Applications |
Features •Silicon NPN epitaxial planar type (Tr1) Silicon PNP epitaxial planar type (Tr2) •Two elements incorporated into one package (Each transistor is separated) •Reduction of the mounting area and assembly cost by one half •For general amplification |
| 描述与应用 |
特点 •NPN硅外延平面型（TR1） PNP硅外延平面型（TR2） •两个要素纳入一个包（每个晶体管分离） •减少安装面积和装配成本的一半 •对于一般的放大 |