| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 180~390 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 100mW/0.1W |
| Description & Applications | PNP Silicon epitaxial planar type For general amplification Complementary to 2SC5609 Features • High foward current transfer ratio hFE • SSS-mini type package, allowing downsizing and thinning of the equipment and automatic insertion through the tape packing |
| 描述与应用 | PNP硅外延平面型 对于一般的放大 互补型2SC5609 特点 •高电流传输比HFE FOWARD •SSS迷你型封装，允许裁员和通过磁带包装设备和自动插入变薄 |