| 最大源漏极电压Vds Drain-Source Voltage | 100V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 170mA/0.17A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.5Ω/Ohm @100mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.8-2.8V |
| 耗散功率Pd Power Dissipation | 225mW/0.225W |
| Description & Applications | N-Channel 1.2-V (G-S) MOSFET Low Threshold Load Switch for Portable Devices Low Power Consumption Increased Battery Life • Ultra Low Voltage Load Switch Features Advanced trench process technology High density cell design for ultra low on-resistance High input impedance High speed switching |
| 描述与应用 | 1.2-V的N沟道MOSFET（G-S） 用于便携式设备的低阈值负荷开关 - 低功耗 - 延长电池寿命 •超低电压负荷开关 先进沟道工艺技术 高密度电池设计超低导通电阻 高输入阻抗 高速开关 |