| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 150mA/0.15A |
| 截止频率fTTranstion Frequency(fT) | 60MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 200~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Transistor Silicon NPN Epitaxial Type General-Purpose Amplifier Applications • High voltage and high current : VCEO = 50 V, IC = 150 mA (max) • Excellent hFE linearity : hFE (IC = 0.1 mA)/hFE (IC = 2 mA) = 0.95 (typ.) • High hFE : hFE = 120~400 |
| 描述与应用 | 晶体管的硅NPN外延型 通用放大器应用 •高电压和高电流 VCEO=50 V，IC=150 mA（最大） •优秀的HFE线性： HFE（IC= 0.1毫安）/ HFE（IC= 2毫安）= 0.95 •高HFE：HFE=120〜400 |