| 最大源漏极电压VdsDrain-Source Voltage | 30V/-12V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 10V/8V |
| 最大漏极电流IdDrain Current | 400mA/-2A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 12.8Ω@ VGS = 1.5V,ID =10mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.4~1.3V |
| 耗散功率PdPower Dissipation | 800mW/0.8W |
| Description & Applications | N-Channel and P-Channel Silicon MOSFETS General-Purpose Switching Device Applications Features • Composite type of a low on-resistance ultra-high switching P-channel MOSFET and a small signal N-channel MOSFET for driving P-channel MOSFET enables high-density mounting. • Excellent ON-resistance characteristic. • Best suited for load switches. • N-channel 1.5V drive, P-channel 1.8V drive. |
| 描述与应用 | N沟道和P沟道硅MOSFET 通用开关设备应用 特点 •复合型驱动P沟道MOSFET的低导通电阻超高开关P沟道MOSFET和一个小信号N沟道MOSFET，使高密度安装。 •优秀的导通电阻特性。 •最适合用于负载开关。 •N沟道，P沟道1.5V驱动1.8V驱动器。 |