| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | 50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流IC Collector Current(IC) | 80mA |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 2.2KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 1 |
| 直流电流增益hFE DC Current Gain(hFE) | 6 |
| 截止频率fT Transtion Frequency(fT) | 150MHz |
| 耗散功率Pc Power Dissipation | 0.125W/125mW |
| Description & Applications | Silicon NPN epitaxial planar type For digital circuits Features Optimum for high-density mounting and downsizing of the equipment Contribute to low power consumption |
| 描述与应用 | NPN硅外延平面型 用于数字电路 特性 最适用于高密度设 备的安装和精简 有助于低功耗 |