| 最大源漏极电压VdsDrain-Source Voltage | 50V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 7V |
| 最大漏极电流IdDrain Current | 100mA/0.1A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 1200mΩ@ VGS = 4V, ID = 10mA |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.9~1.5V |
| 耗散功率PdPower Dissipation | 125mW/0.125W |
| Description & Applications | Silicon N-channel MOSFET For switching ■ Features • Allowing 2.5 V drive • Incorporating a built-in gate protection-diode • Reduction of the mounting area and assembly cost by one half |
| 描述与应用 | 硅N沟道MOSFET 对于开关 ■特点 •允许2.5 V驱动器 •集成了内置栅极保护二极管 •减少安装面积和装配成本的一半 |