| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 6V |
| 最大漏极电流Id Drain Current | 600mA/0.6A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 0.70Ω/Ohm @500mA,4.5V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 0.45-0.9V |
| 耗散功率Pd Power Dissipation | 150mW/0.15W |
| Description & Applications | N-Channel 1.8 V (G-S) MOSFET FEATURES •Halogen-free According to IEC 61249-2-21 Definition •TrenchFET Power MOSFET: 1.8 V Rated • Gate-Source ESD Protected: 2000V • High-Side Switching • Low On-Resistance: 0.7 • Low Threshold: 0.8 V (typ.) • Fast Switching Speed: 10 ns • Compliant to RoHS Directive 2002/95/EC |
| 描述与应用 | N沟道1.8 V（G-S）的MOSFET 功率MOSFET：1.8 V额定 •门源ESD保护：2000 V •高边开关 •低导通电阻：0.7 •低阈值：0.8 V（典型值） •开关速度快：10 ns的 •符合RoHS指令2002/95/EC |