| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −45V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~600 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −620mV/-0.62V |
| 耗散功率PcPoWer Dissipation | 200mW/0.2W |
| Description & Applications | PNP small signal transistor FEATURES 1) High gain and low saturation voltage. 2) Ideal for small load switching applications. 3) Complements the BCX19. |
| 描述与应用 | PNP小信号晶体管 特点 1）高增益，低饱和电压。 2）非常适于小型负载开关应用。 3）补充BCX19 |