| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 80mA |
| 截止频率fTTranstion Frequency(fT) | 8Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 50~150 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 500mV/0.5V |
| 耗散功率PcPower Dissipation | 420mW/0.42W |
| Description & Applications | Silicon NPN Planar RF Transistor Applications For low–noise, high–gain applications such as power amplifiers up to 2GHz and for linear broadband amplifiers. Features Low noise figure High transition frequency fT = 8 GHz Excellent large-signal behaviour |
| 描述与应用 | 硅NPN平面RF晶体管 应用 对于低噪声，高增益应用，如电源 放大器高达2GHz和线性宽带 放大器。 特点 低噪声系数？ 过渡频率fT=8 GHz的 优秀的大信号行为 |