| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 20V |
| 集电极连续输出电流ICCollector Current(IC) | 5A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 230~600 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 1V |
| 耗散功率PcPower Dissipation | 750mW/0.75W |
| Description & Applications | Silicon NPN epitaxial planer type For low-frequency power amplification For stroboscope Features Low collector to emitter saturation voltage VCE(sat) Satisfactory operation performances at high efficiency with the low-voltage power supply |
| 描述与应用 | NPN硅外延平面型 对于低频功率放大频闪 特点 低集电极到发射极饱和电压VCE（SAT） 高效率，令人满意的操作性能 低电压供电 |