| 最大源漏极电压Vds Drain-Source Voltage |
7V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage |
-0V~7V |
| 最大漏极电流Id Drain Current |
25MA |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance |
|
| 开启电压Vgs（th） Gate-Source Threshold Voltage |
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| 耗散功率Pd Power Dissipation |
150MW/0.15W |
| Description & Applications |
* Build in Biasing Circuit MOS FET IC. * VHF/UHF RF Amplifier. * Build in Biasing Circuit; To reduce using parts cost & PC board space. * High forward transfer admittance; (|yfs| = 42 mS typ. at f = 1 kHz). * Withstanding to ESD; Build in ESD absorbing diode. Withstand up to 250V at C=200pF, Rs=0 conditions. |
| 描述与应用 |
* 内置偏置电路MOS FET的IC。 * VHF / UHF RF放大器。 * 在偏置电路生成，降低零部件的成本与PC板空间。 * 较强的正向转移导纳（| YFS|=42毫秒（典型值）f= 1千赫）。 * 耐ESD;内置ESD吸收二极管。承受高达250V在C = 200pF，Rs = 0条件。 |