| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 12V |
| 集电极连续输出电流ICCollector Current(IC) | 60mA |
| 截止频率fTTranstion Frequency(fT) | 6Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 30~200 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 333mW/0.333W |
| Description & Applications | The RF Line NPN Silicon High-Frequency TRANSISTOR Designed for low noise, wide dynamic range front–end amplifiers and low–noise VCO’s. Available in a surface–mountable plastic package. This Motorola small–signal plastic transistor offers superior quality and performance at low cost. |
| 描述与应用 | RF线NPN硅 高频三极管 专为低噪声，宽动态范围前端放大器 低噪声VCO。可在一个表面贴装塑料包装。这 摩托罗拉的小信号的塑料晶体管提供优异的质量和性能 成本低。 |