| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -75V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -70V |
| 集电极连续输出电流ICCollector Current(IC) | -2A |
| 截止频率fTTranstion Frequency(fT) | 160MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 300~800 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP SILICON PLANAR HIGH GAIN MEDIUM POWER TRANSISTOR FEATURES High gain and Very low saturation voltage COMPLEMENTARY TYPE - FZT692B APPLICATIONS Battery powered circuits |
| 描述与应用 | PNP硅平面高增益中等功率晶体管 特点 高增益和极低的饱和电压 互补型 - FZT692B 应用 电池供电电路 |