| 最大源漏极电压VdsDrain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 12V |
| 最大漏极电流IdDrain Current | 2.7A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 120mΩ@ VGS = 2.5V, ID = 2.2A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 0.6~1.25V |
| 耗散功率PdPower Dissipation | 960mW/0.96W |
| Description & Applications | Ultra Low On-Resistance Dual N-Channel MOSFET Surface Mount Available in Tape & Reel Low Gate Charge |
| 描述与应用 | 超低导通电阻 双N沟道MOSFET 表面贴装 可在磁带和卷轴 低栅极电荷 |