| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -40V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −40V |
| 集电极连续输出电流ICCollector Current(IC) | -2A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 450 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -350mV/-0.35V |
| 耗散功率PcPoWer Dissipation | 480mW/0.48W |
| Description & Applications | 40 V low VCE(sat) PNP transistor FEATURES • Low collector-emitter saturation voltage • High current capability • Improved device reliability due to reduced heat generation • Enhanced performance over SOT23 1A standard packaged transistor. • SOT23 plastic package. • NPN complement: PBSS4240T. APPLICATIONS • Supply line switching circuits • Battery management applications • DC/DC converter applications • Strobe flash units • Heavy duty battery powered equipment (motor and lamp drivers). |
| 描述与应用 | 40伏的低VCE（sat）的PNP晶体管 特点 •低集电极 - 发射极饱和电压 •高电流能力 •提高设备的可靠性，由于产生的热量减少 •增强的性能超过SOT231A标准包装的晶体管。 •SOT23塑料包装。 •NPN补充：PBSS4240T。 应用 •供电线路开关电路 •电池管理应用 •DC / DC转换器应用 •闪光灯单元 •重型电池供电设备（电机和灯驱动器）。 |