| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) |
20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) |
15V |
| 集电极连续输出电流ICCollector Current(IC) |
120mA/0.12A |
| 截止频率fTTranstion Frequency(fT) |
9Ghz |
| 直流电流增益hFEDC Current Gain(hFE) |
100~250 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage |
|
| 耗散功率PcPower Dissipation |
400mW/0.4W |
| Description & Applications |
NPN 9 GHz wideband transistors FEATURES • High power gain • Low noise figure • High transition frequency • Gold metallization ensures excellent reliability. DESCRIPTION NPN silicon planar epitaxial transistors, intended for wideband applications in the GHz range, such as analog and digital cellular telephones, cordless telephones (CT1, CT2, DECT, etc.), radar detectors, satellite TV tuners (SATV), MATV/CATV amplifiers and repeater amplifiers in fibre-optical systems. The transistors are mounted in plastic SOT143B and SOT143R packages. |
| 描述与应用 |
NPN9 GHz的宽带晶体管 特点 •高功率增益 •低噪声系数 •高转换频率 •黄金金属确保卓越的可靠性。 说明 NPN硅平面外延晶体管，用于在GHz范围内的宽带应用，如模拟和数字移动电话，无绳电话（CT1，CT2，DECT等），雷达探测器，卫星电视调谐器（SATV），MATV/ CATV放大器在光纤系统中的中继放大器。塑料SOT143B SOT143R包的安装在晶体管。 |