| 最大源漏极电压Vds Drain-Source Voltage | 20V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 12V |
| 最大漏极电流Id Drain Current | 1.7A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | |
| 耗散功率Pd Power Dissipation | 625mW/0.625W |
| Description & Applications | V(BR)DSS=20V; RDS(ON)=0.18V; ID=1.7A DESCRIPTION This new generation of high density MOSFETs from Zetex utilises a unique structure that combines the benefits of low on-resistance with fast switching speed. This makes them ideal for high efficiency, low voltage, power management applications. FEATURES • Low on-resistance • Fast switching speed • Low threshold • Low gate drive • SOT23 package |
| 描述与应用 | V（BR）DSS =20V; RDS（ON）=0.18V，ID=1.7A 说明 Zetex的新一代高密度的MOSFET采用了独特的 结构，结合快速开关的低导通电阻的好处 速度。这使得它们成为理想的高效率，低电压，功率 管理应用程序。 •低导通电阻 •开关速度快 •低门槛 •低栅极驱动器 •SOT23封装 |