| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -35V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −25V |
| 集电极连续输出电流ICCollector Current(IC) | -3A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −600mV/-0.6V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | PNP Low Saturation Transistor These devices are designed with high current gain and low saturation voltage with collector currents up to 3A continuous. |
| 描述与应用 | 低饱和PNP晶体管 这些设备的设计与高电流增益和低饱和电压与集电极电流高达3A的连续。 |