| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -400V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | -400V |
| 集电极连续输出电流ICCollector Current(IC) | −500mA/-0.5A |
| 截止频率fTTranstion Frequency(fT) | 50MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 50 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 2W |
| Description & Applications | PNP SILICON PLANAR HIGH VOLTAGE TRANSISTOR FEATURES 0.5 Amp continuous current Low saturation voltage COMPLEMENTARY TYPE FZT658 |
| 描述与应用 | 硅PNP外延 PNP硅平面高压晶体管 特点 0.5安培连续电流 低饱和电压 互补型FZT658 |