| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -80V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | -1A |
| 截止频率fTTranstion Frequency(fT) | 150MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -295mV/-0.295V |
| 耗散功率PcPoWer Dissipation | 500mW/0.5W |
| Description & Applications | Medium power PNP transistor Features • VCE(sat)maximum specification reduction • Reverse blocking specification improvement Applications • MOSFET gate driving • Power switches • Motor control |
| 描述与应用 | 中等功率PNP晶体管 特点 •VCE（sat）的最大规格降低 •反向阻断规范改进 应用 •MOSFET栅极驱动 •电源开关 •电机控制 |