| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 80MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~460 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −500mV/-0.5V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | Low frequency transistor For general amplification Complementary to 2SC5950G Features High forward current transfer ratio hFE Smini typ package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | 低频晶体管 对于一般放大 互补型2SC5950G 特点 高正向电流传输比HFE SMINI典型包装，让精简的设备和通过自动插入磁带包装 |