| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −50V |
| 集电极连续输出电流ICCollector Current(IC) | −150mA/-0.15A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 90~180 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -100mV/-0.1V |
| 耗散功率PcPoWer Dissipation | 150mW/0.15W |
| Description & Applications | PNP/NPN epitaxial planar silicon transistors fast switching speed； high breakdown voltage |
| 描述与应用 | PNP/ NPN外延平面硅晶体管 开关速度快; 击穿电压高 |