| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −45V |
| 集电极连续输出电流ICCollector Current(IC) | −100mA/-0.1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 220~475 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | −650mV/-0.65V |
| 耗散功率PcPoWer Dissipation | 225mW/0.225W |
| Description & Applications | PNP epitaxial planar transistor General Purpose Transistors FEATURE Moisture Sensitivity Level: 1 Pb-Free Packages are Available |
| 描述与应用 | PNP外延平面晶体管 通用晶体管 特写 湿气敏感性等级：1 提供无铅封装 |