| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -5A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 59mΩ@ VGS = -10V, ID = -2.5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -0.8~-2.0V |
| 耗散功率PdPower Dissipation | 2.2W |
| Description & Applications | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (Ultra-High-Speed U-MOSIII) High-Efficiency DC/DC Converter Applications • Small footprint due to small and thin package • Low drain-source ON-resistance: RDS (ON) = 44 mΩ (typ.) • High forward transfer admittance: |Yfs| = 8.0 S (typ.) • Low leakage current: IDSS = −10 μA (max) (VDS = −30 V) • Enhancement mode: Vth = −0.8 to −2.0 V (VDS = −10 V, ID = −1 mA) |
| 描述与应用 | 东芝场效应晶体管硅P沟道MOS型（超高速U-MOSIII） 高效率DC/ DC转换器应用 •由于占地面积小，小而薄的包装 •低漏源导通电阻RDS（ON）= 44mΩ（典型值） •高正向转移导纳：| YFS|= 8.0 S（典型值） •低漏电流：IDSS= -10μA（最大）（VDS=-30 V） •增强模式：Vth= -0.8到-2.0 V（VDS= -10 V，ID=-1毫安）， |