| 最大源漏极电压Vds Drain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±) Gate-Source Voltage | 20V |
| 最大漏极电流Id Drain Current | 200mA/0.2A |
| 源漏极导通电阻ΩRds DΩ/Ohmain-SouΩ/Ohmce On-State Ω/Ohmesistance | 2.5Ω/Ohm @500mA,10V |
| 开启电压Vgs（th） Gate-Source Threshold Voltage | 1.3-3V |
| 耗散功率Pd Power Dissipation | 330mW/0.33W |
| Description & Applications | SOT23 N-CHANNEL ENHANCEMENT MODE VERTICAL DMOS FET |
| 描述与应用 | SOT23封装N沟道增强 模式垂直DMOS FET |