| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 15V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 65mA |
| 截止频率fTTranstion Frequency(fT) | 8.5Ghz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~170 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 125mW/0.125W |
| Description & Applications | Silicon NPN epitaxial planar type 2 GHz band low-noise amplification ■ Features • High transition frequency fT • Low collector output capacitance (Common base, input open circuited) Cob • SS-Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 2 GHz频段低噪声放大 ■特点 •高转换频率fT •低集电极输出电容（通用基础，输入开路）COB •SS-迷你型包装，使瘦身的设备和 通过自动插入磁带包装 |