| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 50V |
| 集电极连续输出电流ICCollector Current(IC) | 100mA/0.1A |
| 截止频率fTTranstion Frequency(fT) | 100MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 160~460 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 100mV/0.1V |
| 耗散功率PcPower Dissipation | 150mW/0.15W |
| Description & Applications | Silicon NPN epitaxial planar type For general amplifi cation Features Features * High forward current transfer ratio h High forward current transfer ratio h High forward current transfer ratio hFFEE * mini typ package, allowing downsizing of the equipment and Smini typ package, allowing downsizing of the equipment and aautomatic utomatic insertion through the tape packing |
| 描述与应用 | NPN硅外延平面型 对于一般的扩增阳离子 特点特点 *高正向电流传输比h高正向电流传输比h高正向电流传输比hFFEE *迷你典型包装，允许缩减的设备和SMINI的典型包装允许设备和A自动utomatic的瘦身 通过磁带插入包装 |