| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 70mA |
| 截止频率fTTranstion Frequency(fT) | 5.5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~160 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 5V |
| 耗散功率PcPower Dissipation | 250mW/0.25W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor UHF Wide-band Low-noise Amplifier Applications Features • High cut-off frequency : fT= 5.5GHz typ. • High gain : S21e2 =11dB typ (f=1GHz). =19dB typ (f=400MHz). • Ultrasmall package permitting applied sets to be small and slim. |
| 描述与应用 | NPN平面外延硅晶体管 UHF宽带低噪声放大器应用 特点 •高截止频率：：FT =5.5GHZ典型。 •高增益：S21E2 =11分贝典型值（F =1GHz的）。 =19分贝典型值（F =400MHZ）。 •超小封装允许设置小而纤细。 |