| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | -60V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | −60V |
| 集电极连续输出电流ICCollector Current(IC) | −600mA/- 0.6A |
| 截止频率fTTranstion Frequency(fT) | 200MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~300 |
| 管压降VCE（sat）Collector-Emitter SaturationVoltage | -400mV/-0.4V |
| 耗散功率PcPoWer Dissipation | 1.2W |
| Description & Applications | SURFACE MOUNT PNP SILICON TRANSISTOR DESCRIPTION: The CENTRAL SEMICONDUCTOR CXT2907A type is an PNP silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for small signal general purpose and switching applications. |
| 描述与应用 | 表面贴装 PNP硅晶体管 产品描述： 该中央半导体CXT2907A的类型是PNP硅晶体管由外延平面工艺，环氧树脂模压在一个表面贴装封装，小信号通用开关应用而设计制造。 |