| 最大源漏极电压VdsDrain-Source Voltage | -30V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | -4A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 120mΩ@ VGS = -4V, ID = -1A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | -1~-2.4V |
| 耗散功率PdPower Dissipation | 1.3W |
| Description & Applications | P-Channel Silicon MOSFET Ultrahigh-Speed Switching Applications Features • Low ON-resistance. • Ultrahigh-speed switching •4V drive. |
| 描述与应用 | P-沟道硅MOSFET 超高速开关应用 特点 •低导通电阻。 •超高速开关 •4V驱动器。 |