| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 120V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 100V |
| 集电极连续输出电流ICCollector Current(IC) | 1A |
| 截止频率fTTranstion Frequency(fT) | 120MHz |
| 直流电流增益hFEDC Current Gain(hFE) | 140~400 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | 400mV/0.4V |
| 耗散功率PcPower Dissipation | 900mW/0.9W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistors High-Voltage Switching Applications Adoption of FBET, MBIT processes. High breakdown voltage and large current capacity. High-speed switching. Ultrasmall size making it easy to provide high-density, small-sized hybrid ICs. |
| 描述与应用 | NPN平面外延硅晶体管 高电压 开关应用 采纳FBET，MBIT进程。 高击穿电压和大电流的能力。 高速开关。 超小尺寸使其易于提供高密度，小尺寸的混合集成电路。 |