| 最大源漏极电压VdsDrain-Source Voltage | 60V |
| 最大栅源极电压Vgs(±)Gate-Source Voltage | 20V |
| 最大漏极电流IdDrain Current | 3A |
| 源漏极导通电阻RdsDrain-Source On-State Resistance | 133mΩ@ VGS = 4V, ID = 0.5A |
| 开启电压Vgs（th）Gate-Source Threshold Voltage | 1.2~2.6V |
| 耗散功率PdPower Dissipation | 1.3W |
| Description & Applications | N-Channel Silicon MOSFET General-Purpose Switching Device Applications Ultrahigh-Speed Switching Applications Features • Ultrahigh-speed switching. • 4V drive. • Composite type, facilitating high-density mounting |
| 描述与应用 | N-沟道硅MOSFET 通用开关设备应用 超高速开关应用 特点 •超高速开关。 •4V驱动器。 •复合型，促进高密度安装。 |