| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) Q1/Q2 |
10V/13V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) Q1/Q2 |
5V/6V |
|
集电极连续输出电流IC
Collector Current(IC) Q1/Q2
|
25mA/80mA |
|
直流电流增益hFE DC Current Gain(hFE)
Q1/Q2
|
70~140/110~160 |
|
截止频率fT Transtion Frequency(fT)
Q1/Q2
|
12000MHz/8500MHz |
| 耗散功率Pc Power Dissipation |
0.1W |
| Description & Applications |
Features • TOSHIBA TRANSISTOR SILICON, SILICON GERMANIUM NPN EPITAXIAL PLANAR TYPE • It exsels in the buffer and oscillation use. • Two devices are built in to the fine pich small mold package (6pins):fs6 • VHF~UHF Band Low-Noise Amplifier Applications |
| 描述与应用 |
特点 •东芝晶体管的硅，硅锗NPN外延平面型 •缓冲和振荡使用exsels。 •两个设备都建在PICH优良的小型模具包（6pins咨询）：FS6 •VHF〜UHF频段低噪声放大器应用 |