| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) | -50V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) | -50V |
| 集电极连续输出电流IC Collector Current(IC) | -100mA/-0.1A |
| 基极输入电阻R1 Input Resistance(R1) | 2.2KΩ/Ohm |
| 基极-发射极输入电阻R2 Base-Emitter Resistance(R2) | 10KΩ/Ohm |
| 电阻比(R1/R2) Resistance Ratio | 0.22 |
| 直流电流增益hFE DC Current Gain(hFE) | 70 |
| 截止频率fT Transtion Frequency(fT) | |
| 耗散功率Pc Power Dissipation | 0.25W/250mW |
| Description & Applications | Features • PNP 500 mA, 50 V resistor-equipped transistors • Built-in bias resistors n Reduces component count • Simplifies circuit design n Reduces pick and place costs • 500 mA output current capability n ±10 % resistor ratio tolerance Applications • Digital application in automotive and industrial segments • Cost-saving alternative for BC807 series in digital applications • Controlling IC inputs • Switching loads |
| 描述与应用 | 特点 •PNP500毫安，50 V电阻配备晶体管 •内置偏置电阻Ñ减少了元件数量 •简化电路设计n减少取放成本 •500 mA的输出电流能力n±10％电阻比例容差 应用 •数字应用在汽车和工业领域 •节省成本的替代BC807系列数字应用 •控制IC输入开关负载 |