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商品参数:

  • 型号:RN2102FS
  • 厂家:TOSHIBA
  • 批号:05+NOPB 05+ROHS
  • 整包数量:10000
  • 最小起批量:100
  • 标记/丝印/代码/打字:U1
  • 封装:FSM
  • 技术文档:下载

集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO)-20V
集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO)-20V
集电极连续输出电流IC Collector Current(IC)-50mA
基极输入电阻R1 Input Resistance(R1)10KΩ/Ohm
基极-发射极输入电阻R2 Base-Emitter Resistance(R2)10KΩ/Ohm
电阻比(R1/R2) Resistance Ratio1
直流电流增益hFE DC Current Gain(hFE)60
截止频率fT Transtion Frequency(fT)
耗散功率Pc Power Dissipation0.05W/50mW
Description & ApplicationsFeatures •Transistor Silicon PNP Epitaxial Type (PCT Process) •Bias Resistor built-in Transistor •Incorporating a bias resistor into a transistor reduces parts count. Reducing the parts count enable the manufacture of ever more compact equipment and save assembly cost. •Complementary to RN1101FS~RN1106FS Applications •Switching, Inverter Circuit, Interface Circuit and Driver Circuit Applications
描述与应用特点 •晶体管的硅PNP外延型(PCT工艺) •内置偏置电阻晶体管 •将偏置电阻晶体管,减少了部件数量。减少零件数,使制造更加紧凑的设备和节省组装成本。 •互补RN1101FS的〜RN1106FS 应用 •开关,逆变电路,接口电路和驱动器电路应用
规格书PDF 下载

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深圳市爱瑞凯电子科技有限公司
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RN2102FS
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