| 最大源漏极电压VdsDrain-Source Voltage | 20v |
| 栅源极击穿电压V(BR)GSGate-Source Voltage | -20v |
| 漏极电流(Vgs=0V)IDSSDrain Current | 0.14~0.24ma |
| 关断电压Vgs(off)Gate-Source Cut-off Voltage | -0.2~-1.2v |
| 耗散功率PdPower Dissipation | 100mW/0.1W |
| Description & Applications | N-channel Junction FET Features • Especially suited for use in electret condenser microphone. • Ultrasmall package permitting TF202 applied sets to be made small and slim. • Excellent voltage characteristics. • Excellent transient characteristics. • Adoption of FBET process. |
| 描述与应用 | N沟道结型场效应管 特点 •尤其适用于使用电容式驻极体 麦克风。 •超小包装允许TF202 应用设置作出小巧玲珑。 •优秀的电压特性。 •出色的瞬态特性。 •通过过程FBET。 |