| 集电极-基极反向击穿电压V(BR)CBOCollector-Base Voltage(VCBO) | 20V |
| 集电极-发射极反向击穿电压V(BR)CEOCollector-Emitter Voltage(VCEO) | 10V |
| 集电极连续输出电流ICCollector Current(IC) | 70mA |
| 截止频率fTTranstion Frequency(fT) | 1.5GHz |
| 直流电流增益hFEDC Current Gain(hFE) | 100~180 |
| 管压降VCE（sat）Collector-Emitter Saturation Voltage | |
| 耗散功率PcPower Dissipation | 400mW/0.4W |
| Description & Applications | NPN Epitaxial Planar Silicon Transistor VHF High-frequency Amplifier Applications Applications • VHF, RF, MIXER, OSC, IF amplifier. Features • High cut-off frequency • High gain • Ultrasmall package permitting applied sets to be small and slim. |
| 描述与应用 | NPN平面外延硅晶体管 VHF高频放大器的应用 应用 •甚高频，射频，混频器，振荡器，IF放大器。 特点 •高截止频率 •高增益 •超小封装允许设置小而纤细。 |