| 集电极-基极反向击穿电压V(BR)CBO Collector-Base Voltage(VCBO) |
-35V/35V |
| 集电极-发射极反向击穿电压V(BR)CEO Collector-Emitter Voltage(VCEO) |
-30V/30V |
| 集电极连续输出电流IC Collector Current(IC) |
-500mA/500mA |
| 截止频率fT Transtion Frequency(fT) |
200MHz/300MHz |
| 直流电流增益hFE DC Current Gain(hFE) |
70~400/700~400 |
| 管压降VCE（sat） Collector-Emitter Saturation Voltage |
-100mV/100mV |
| 耗散功率Pc Power Dissipation |
300mW |
| Description & Applications |
Features • TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) Silicon NPN Epitaxial Type (PCT Process) Q1: • Excellent hFE linearity : hFE(2)= 25 (min) at VCE = −6V, IC = −400mA Q2: • Excellent hFE linearity : hFE(2) = 25 (min) at VCE = 6V, IC = 400mA • Audio Frequency General Purpose Amplifier Applications • Driver Stage Amplifier Applications • Switching application |
| 描述与应用 |
特点 •东芝晶体管的硅PNP外延型硅NPN外延型（PCT工艺）（PCT工艺） Q1： •优秀的HFE线性：HFE（2）=25（分钟）在VCE=6V，IC=-400毫安 Q2： •优秀的HFE线性：HFE（2）=25（分钟）VCE=6V，IC=400毫安 •音频通用放大器应用 •驱动器级放大器的应用 •开关应用 |